 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 Package Drawing (Unit : mm) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 Features * Dual MOS FET chips in small package * 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 m (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 RDS(on)2 = 32 m (MAX.) (VGS = 2.5 V, ID = 3.5 A) 1.8 Max. 1 5.37 Max. 4 6.0 0.3 4.4 +0.10 -0.05 * Low Ciss 0.8 Ciss = 750 pF Typ. 0.05 Min. * Small and surface mount package (Power SOP8) 0.15 * Built-in G-S protection diode 0.5 0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 -0.05 Ordering information Part Number Package Power SOP8 PA1757G Absolute Maximum Ratings (TA = 25 C) Drain to source voltage Gate to source voltage Drain current (DC) Drain current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 20 12.0 7.0 28 1.7 2.0 150 -55 to +150 2 V V A A W W C C Drain Total power dissipation (1 unit) Total power dissipation (2 unit) Channel temperature Storage temperature Gate Body Diode Notes 1. PW 10 s, Duty Cycle 1 % 2. TA = 25 C, Mounted on ceramic substrate of 2000 mm x 1.1 mm Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D12910EJ2V0DS00 (2nd edition) Date Published September 1998 NS CP (K) Printed in Japan (c) 1998 PA1757 Electrical Characteristics (TA = 25 C) Characteristics Drain to source on-state resistance Symbol RDS(on)1 RDS(on)2 Gate to source cutoff voltage Forward transfer admittance Drain leakage current Gate to source leakage current Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body diode forward voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) ID = 7.0 A VDD = 16 V VGS = 4.0 V IF = 7.0 A, VGS = 0 V Test Conditions VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VDS = 20 V, VGS = 0 V VGS = 12.0 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.5 A VGS(on) = 4.0 V VDD = 10 V RG = 10 750 420 140 57 206 593 815 13.0 2.6 5.3 0.75 0.5 5.0 MIN. TYP. 16.2 22 0.8 13 10 10 MAX. 23 32 1.5 Unit m m V S A A pF pF pF ns ns ns ns nC nC nC V Test circuit 1 Switching time D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS Test circuit 2 Gate charge D.U.T. IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 2 PA1757 Typical Characteristics (TA = 25 C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 2000mm 2 x 1.1mm Single Pulse , 1 unit 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - S RDS(on) - Drain to Source On-State Resistance - mW FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 TA=-50C -25C VDS=10V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed 10 TA=25C 75C 150C 50 ID=3.5A 25 1 0.1 1 10 100 0 2 4 6 8 10 12 14 ID- Drain Current - A RDS(on) - Drain to Source On-State Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 60 Pulsed 1.0 VDS = 10 V ID = 1 mA 40 VGS=2.5V 0.5 20 VGS=4.5V 0 1 10 ID - Drain Current - A 100 0 - 50 0 50 100 150 Tch - Channel Temperature -C 3 PA1757 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 40 VGS=2.5V 30 100 VGS=2.5V 10 VGS=0 20 VGS=4.5V 1 10 ID= 3.5A - 50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature -C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz tr tf td(off) td(on) 1000 Ciss Coss 100 Crss 100 10 10 0.1 1 10 100 1 0.1 1 VDD =10V VGS(on) = 4V RG =10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 30 100 VDD=16V 10V 4V VGS 6 20 4 10 10 VDS 0 4 8 12 2 1 0.1 1 10 100 0 16 IF - Diode Current - A QG - Gate Charge - nC 4 VGS - Gate to Source Voltage - V di/dt =100A/ s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 40 ID=7.0A PA1757 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W/package TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 2 unit 1 unit Mounted on ceramic substrate of 2000mm 2 x 1.1mm dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 100 S( d ite im 5V) . )L on =4 S ID(pulse) Mounted on ceramic substrate of 2000mm x 1.1mm21 unit 1 m s ID - Drain Current - A RD t VG (a VGS=4.5V 20 15 10 5 2.5V 10 ID(DC) 10 10 m s 0m s Po 1 we rD DC iss ipa tio n Lim 0.1 0.1 TA = 25 C Single Pulse 1 ite d 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed ID - Drain Current - A 10 TA=150C 125C 1 75C TA=25C -25C -50C 0.1 VDS=10V 0 1 2 3 4 VGS - Gate to Source Voltage - V 5 PA1757 [MEMO] 6 PA1757 [MEMO] 7 PA1757 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
Price & Availability of UPA1757
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |